FDD3860 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low

FDD3860
N-Channel PowerTrench^® MOSFET
100V, 29A, 36mΩ
Features
„ Max r_DS(on) = 36mΩ at V_GS = 10V, I_D = 5.9A
„ High performance trench technology for extremely low r_DS(on)
„ 100% UIL tested
„ RoHS Compliant
October 2008
tm
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench^® process. This part is
tailored for low r_DS(on) and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications.
Applications
„ DC-AC Conversion
„ Synchronous Rectifier
G
S
D
D_{T O}- P_-2A₅K₂
(TO-252)
D
G
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
29
6.2
60
121
69
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.8
(Note 1a)
40
°C/W
Device Marking
FDD3860
Device
FDD3860
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
1
FDD3860 Rev.C1
www.fairchildsemi.com