FDD3706 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 20V N-Channel PowerTrench MOSFET

April 2002
FDD3706/FDU3706
20V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
• DC/DC converter
• Motor Drives
Features
• 50 A, 20 V
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 11 mΩ @ VGS = 4.5 V
RDS(ON) = 16 mΩ @ VGS = 2.5 V
• Low gate charge (16 nC)
• Fast Switching
• High performance trench technology for extremely
low RDS(ON)
D
G
D_TO-P_-A₂₅K₂
(TO-252)
GDS
I-PAK
(TO-251AA)
G
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C
(Note 3)
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
@TA=25°C
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
20
± 12
50
14.7
60
44
3.8
1.6
-55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
FDD3706
FDD3706
D-PAK (TO-252)
FDU3706
FDU3706
I-PAK (TO-251)
Reel Size
13’’
Tube
3.4
45
96
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
75
©2002 Fairchild Semiconductor Corp.
FDD3706/FDU3706 Rev C (W)