FDD3690 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 100V N-Channel PowerTrench MOSFET

April 2001
FDD3690
100V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V
RDS(ON) = 71 mΩ @ VGS = 6 V
• Low gate charge (28nC typical)
• Fast Switching
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
Pulsed
(Note 3)
(Note 1a)
PD
TJ, TSTG
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD3690
FDD3690
13’’
D
G
S
Ratings
100
±20
22
75
60
3.8
1.6
–55 to +175
2.5
40
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corp.
FDD3690 Rev C(W)