FDD3680 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 100V N-Channel PowerTrench MOSFET

February 2001
FDD3680
100V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 25 A, 100 V. RDS(ON) = 46 mΩ @ VGS = 10 V
RDS(ON) = 51 mΩ @ VGS = 6 V
• Low gate charge (38 nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability.
D
G
S
TO-252
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
V DSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Drain Current – Pulsed
(Note 1)
PD
Maximum Power Dissipation
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJ C
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD3680
FDD3680
13’’
D
G
S
Ratings
100
±20
25
100
68
3.8
1.6
–55 to +175
2.2
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDD3680 Rev B1(W)