FDD3570 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 80V N-Channel PowerTrench MOSFET

February 2000
PRELIMINARY
FDD3570
80V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel Logic level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
This MOSFET features faster switching and lower gate
change than other MOSFETs with comparable RDS(ON)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
• 10 A, 80 V.
RDS(ON) = 0.019 Ω @ VGS = 10 V
RDS(ON) = 0.022 Ω @ VGS = 6 V.
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON) .
• High power and current handling capability.
D
D
G
S
G
TO-252
Absolute Maximum Ratings
TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current-Continuous
(Note 1)
(Note 1a)
PD
TJ, Tstg
Maximum Drain Current – Pulsed
Maximum Power Dissipation @TC = 25^oC
TA = 25^oC
TA = 25^oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to- Case
RθJA
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD3570
FDD3570
13’’
S
Ratings
80
± 20
43
10
110
69
3.4
1.3
-55 to +150
1.8
37
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500
2000 Fairchild Semiconductor Corporation
FDD3570 Rev BW)