FDD306P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

January 2005
FDD306P
P-Channel 1.8V Specified PowerTrench^® MOSFET
Features
■ –6.7 A, –12 V.
R_DS(ON) = 28 mΩ @ V_GS = –4.5 V
R_DS(ON) = 41 mΩ @ V_GS = –2.5 V
R_DS(ON) = 90 mΩ @ V_GS = –1.8 V
■ Fast switching speed
■ High performance trench technology for extremely
low R_DS(ON)
■ High power and current handling capability
Applications
■ DC/DC converter
General Description
This P-Channel 1.8V Specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. It has been opti-
mized for battery power management.
D
G
S
TO-252
S
G
D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJC
R _{θ JA}
R _{θ JA}
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
(Note 1)
(Note 1a)
(Note 1b)
Ratings
–12
±8
–6.7
–54
52
3.8
1.6
–55 to +175
2.9
40
96
Package Marking and Ordering Information
Device Marking
FDD306P
Device
FDD306P
Reel Size
13’’
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
1
FDD306P Rev. C
www.fairchildsemi.com