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FDD2670 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 200V N-Channel PowerTrench MOSFET | |||
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November 2001
FDD2670
200V N-Channel PowerTrenchï MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
⢠3.6 A, 200 V. RDS(ON) = 130 m⦠@ VGS = 10 V
⢠Low gate charge
⢠Fast switching speed
⢠High performance trench technology for extremely
low RDS(ON)
⢠High power and current handling capability
D
G
S
TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
Drain Current â Pulsed
(Note 1)
PD
dv/dt
Maximum Power Dissipation @ TC = 25°C
@ TA = 25°C
@ TA = 25°C
Peak Diode Recovery dv/dt
(Note 1)
(Note 1a)
(Note 1b)
(Note 3)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD2670
FDD2670
13ââ
D
G
S
Ratings
200
±20
3.6
20
70
3.2
1.3
3.2
-55 to +150
1.8
96
Tape width
16mm
Units
V
V
A
W
V/ns
°C
°C/W
°C/W
Quantity
2500 units
ï2001 Fairchild Semiconductor Corporation
FDD2670 Rev C1(W)
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