FDD2612 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 200V N-Channel PowerTrench MOSFET

August 2001
FDD2612
200V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching speed
• Low gate charge (8nC typical)
D
G
S
TO-252
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation
(Note 1)
(Note 1a)
TJ, TSTG
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD2612
FDD2612
13’’
2001 Fairchild Semiconductor Corporation
D
G
S
Ratings
200
± 20
4.9
10
42
3.8
1.6
−55 to +175
3.5
40
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
FDD2612 Rev B1 (W)