FDD2582 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 150V, 21A, 66m

September 2002
FDD2582
N-Channel PowerTrench^® MOSFET
150V, 21A, 66mΩ
Features
• r_DS(ON) = 58mΩ (Typ.), V_GS = 10V, I_D = 7A
• Q_g(tot) = 19nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82855
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
• Electronic Valve Train System
DRAIN
(FLANGE)
D
GATE
SOURCE
TO-252AA
FDD SERIES
G
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25 ^oC, V_GS = 10V)
Continuous (T_C = 100 ^oC, V_GS = 10V)
Continuous (T_amb = 25^oC, V_GS = 10V, R_θJA = 52^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area
Ratings
150
±20
21
15
3.7
Figure 4
59
95
0.63
-55 to 175
1.58
100
52
Units
V
V
A
A
A
mJ
W
W/^oC
o_C
o_C/W
o_C/W
o_C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDD2582 Rev. B