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| FDD2572 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 150V, 29A, 54mΩ | |||
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September 2002
FDD2572 / FDU2572
N-Channel PowerTrench® MOSFET
150V, 29A, 54mâ¦
Features
⢠rDS(ON) = 45m⦠(Typ.), VGS = 10V, ID = 9A
⢠Qg(tot) = 26nC (Typ.), VGS = 10V
⢠Low Miller Charge
⢠Low QRR Body Diode
⢠UIS Capability (Single Pulse and Repetitive Pulse)
⢠Qualified to AEC Q101
Formerly developmental type 82860
Applications
⢠DC/DC converters and Off-Line UPS
⢠Distributed Power Architectures and VRMs
⢠Primary Switch for 24V and 48V Systems
⢠High Voltage Synchronous Rectifier
⢠Direct Injection / Diesel Injection Systems
⢠42V Automotive Load Control
⢠Electronic Valve Train Systems
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
TO-252AA
FDD SERIES
TO-251AA
FDU SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
G
Ratings
150
±20
29
20
4
Figure 4
36
135
0.9
-55 to 175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-251, TO-252
Thermal Resistance Junction to Ambient TO-251, TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.11
100
52
D
S
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDD2572 / FDU2572 Rev. B
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