FDD2570 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 150V N-Channel PowerTrench MOSFET

February 2001
FDD2570
150V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 4.7 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V
RDS(ON) = 90 mΩ @ VGS = 6 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability.
D
G
S
TO-252
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
Drain Current – Pulsed
Maximum Power Dissipation @ TC = 25°C
@ TA = 25°C
(Note 1)
(Note 1a)
@ TA = 25°C (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD2570
FDD2570
13’’
D
G
S
Ratings
150
±20
4.7
30
70
3.2
1.3
-55 to +150
1.8
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDD2570 Rev C(W)