FDD2512 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 150V N-Channel PowerTrench MOSFET

August 2001
FDD2512
150V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. These MOSFETs feature
faster switching and lower gate charge than other
MOSFETs with comparable RDS(ON) specifications. The
result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 6.7 A, 150 V RDS(ON) = 420 mΩ @ VGS = 10 V
RDS(ON) = 470 mΩ @ VGS = 6 V
• Low gate charge (8nC typical)
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
.
D
G
S
TO-252
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD2512
FDD2512
13’’
D
G
S
Ratings
150
±20
6.7
20
42
3.8
1.6
−55 to +175
3.5
40
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDD2512 Rev B2(W)