FDD24AN06LA0 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N CHANNEL LOGIC LEVEL POWER TRENCH MOSFET

February 2004
FDD24AN06LA0
N-Channel Logic Level PowerTrench^® MOSFET
60V, 36A, 24mΩ
Features
• r_DS(ON) = 20mΩ (Typ.), V_GS = 5V, I_D = 36A
• Q_g(tot) = 16nC (Typ.), V_GS = 5V
• Low Miller Charge
• Low Q_RR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 83547
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN (FLANGE)
D
GATE
SOURCE
TO-252AA
FDD SERIES
G
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 25^oC, V_GS = 5V)
Continuous (T_C = 100^oC, V_GS = 5V)
Continuous (T_A = 25^oC, V_GS = 5V, R_θJA = 52^oC/W)
Pulsed
E_AS
P_D
T_J, T_STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
Ratings
60
±20
40
36
25
7.1
Figure 4
32
75
0.5
-55 to 175
Units
V
V
A
A
A
A
A
mJ
W
W/^oC
o_C
Thermal Characteristics
R_θJC
Thermal Resistance Junction to Case TO-252
2.0
R_θJA
Thermal Resistance Junction to Ambient TO-252
100
R_θJA
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area
52
o_C/W
o_C/W
o_C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2004 Fairchild Semiconductor Corporation
FDD24AN06LA0 Rev. A1