FDD20AN06A0_10 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 60V, 45A, 20mW

FDD20AN06A0 _ F085
N-Channel PowerTrench^® MOSFET
60V, 45A, 20mΩ
Features
• r_DS(ON) = 17mΩ (Typ.), V_GS = 10V, I_D = 45A
• Q_g(tot) = 15nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
D ^{FREE I}
A
May 2010
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
Formerly developmental type 82547
DRAIN
(FLANGE)
D
GATE
G
SOURCE
TO-252AA
FDD SERIES
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 100^oC, V_GS = 10V)
Continuous (T_amb = 25^oC, V_GS = 10V, R_θJA = 52^oC/W)
Pulsed
E_AS
P_D
T_J, T_STG
Single Pulse Avalanche Energy ( Note 1)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
Thermal Characteristics
S
Ratings
60
±20
45
32
8
Figure 4
50
90
0.60
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/^oC
o_C
R_θJC
R_θJA
R_θJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area
1.67
100
52
o_C/W
o_C/W
o_C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2010 Fairchild Semiconductor Corporation
FDD20AN06A0_F085 Rev. B1