FDD18N20LZ Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel UniFETTM MOSFET 200 V, 16 A, 125 mΩ

FDD18N20LZ
N-Channel UniFET^TM MOSFET
200 V, 16 A, 125 mΩ
Features
• R _DS(on) = 125 mΩ (Typ.) @ V_GS = 10 V, I_D = 8 A
• Low Gate Charge (Typ. 30 nC)
• Low C_RSS (Typ. 25 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LED TV
• Consumer Appliances
• Uninterruptible Power Supply
December 2013
Description
UniFET^TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
D
G
G
S
D-PAK
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds.
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2011 Fairchild Semiconductor Corporation
1
FDD18N20LZ Rev. C1
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDD18N20LZ
200
±20
16
9.6
64
320
16
8.9
10
89
0.7
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
FDD18N20LZ
1.4
83
Unit
o_C/W
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