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FDD1600N10ALZ Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Consumer Appliances | |||
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FDD1600N10ALZ
N-Channel PowerTrench® MOSFETï
100 V, 6.8 A, 160 mï
January 2014
Features
⢠RDS(on) = 124 mï (Typ.) @ VGS = 10 V, ID = 3.4 A
⢠RDS(on) = 175 mï (Typ.) @ VGS = 5 V, ID = 2.1 A
⢠Low Gate Charge (Typ.2.78 nC)
⢠Low Crss (Typ. 2.04 pF)
⢠Fast Switching
⢠100% Avalanche Tested
⢠Improved dv/dt Capability
⢠RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchld Semicon-
ductorâs advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance and maintain superior
switching performance.
Application
⢠Consumer Appliances
⢠LED TV and Monitor
⢠Synchronous Rectification
⢠Uninterruptible Power Supply
⢠Micro Solar Inverter
D
D
G
G
S
D-PAK
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8â from Case for 5 Seconds
Thermal Characteristics
Symbol
Rï±JC
Rï±JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD1600N10ALZ
100
±20
6.8
4.3
13.6
5.08
6.0
14.9
0.12
-55 to +150
300
FDD1600N10ALZ
8.4
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
1
FDD1600N10ALZ Rev. C3
www.fairchildsemi.com
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