FDD050N03B Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

March 2013
FDD050N03B
N-Channel PowerTrench^® MOSFET
30 V, 90 A, 5.0 mΩ
Features
• R_DS(on) = 3.7 mΩ ( Typ.)@ V_GS = 10 V, I_D = 25 A
• Fast Switching Speed
• Low Gate Charge, Q_G = 33 nC( Typ.)
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor^®’s advance PowerTrench^® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
D
D
G
S
D-PAK
(TO-252)
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC, Silicon Limited)
- Continuous (T_C = 100^oC, Silicon Limited)
- Continuous (T_C = 25^oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 3)
FDD050N03B
30
±16
90*
63*
50
360
72
2
65
0.43
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A.
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 5)
FDD050N03B
2.3
40
Unit
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2009 Fairchild Semiconductor Corporation
1
FDD050N03B Rev. C0
www.fairchildsemi.com