FDD044AN03L Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

December 2003
FDD044AN03L / FDU044AN03L
N-Channel PowerTrench^® MOSFET
30V, 35A, 4.4mΩ
Features
• r_DS(ON) = 3.6mΩ (Typ.), V_GS = 4.5V, I_D = 35A
• Q_g(5) = 48nC (Typ.), V_GS = 5V
• Low Miller Charge
• Low Q_RR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Applications
• 12V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• ABS
• DC-DC Converters
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C < 168^oC, V_GS = 10V)
Continuous (T_C < 167^oC, V_GS = 4.5V)
Continuous (T_amb = 25^oC, V_GS = 10V, with R_θJA = 52^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area
Ratings
30
±20
35
35
21
Figure 4
690
160
1.07
-55 to 175
0.94
100
52
Units
V
V
A
A
A
A
mJ
W
W/^oC
o_C
o_C/W
o_C/W
o_C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
FDD044AN03L / FDU044AN03L Rev. B1