FDC8884 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ

FDC8884
N-Channel Power Trench^® MOSFET
30 V, 6.5 A, 23 mΩ
January 2012
Features
General Description
„ Max r_DS(on) = 23 mΩ at V_GS = 10 V, I_D = 6.5 A
„ Max r_DS(on) = 30 mΩ at V_GS = 4.5 V, I_D = 6.0 A
„ High performance trench technology for extremely low r_DS(on)
„ Fast switching speed
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been optimized for r_DS(on) switching performance.
Application
„ Primary Switch
S
D
D
Pin 1
G
D
D
SuperSOT^TM -6
S4
D5
D6
3G
2D
1D
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T_C = 25 °C
-Continuous
T_A = 25 °C
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±20
8.0
6.5
25
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
30
(Note 1a)
78
°C/W
Device Marking
.884
Device
FDC8884
Package
SSOT-6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDC8884 Rev.C2
www.fairchildsemi.com