FDC86244 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 150 V, 2.3 A, 144 mΩ

November 2010
FDC86244
N-Channel Power Trench^® MOSFET
150 V, 2.3 A, 144 mΩ
Features
General Description
„ Max r_DS(on) = 144 mΩ at V_GS = 10 V, I_D = 2.3 A
„ Max r_DS(on) = 188 mΩ at V_GS = 6 V, I_D = 1.9 A
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Fast switching speed
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been optimized for r_DS(on), switching performance and
ruggedness.
Applications
„ Load Switch
„ Synchronous Rectifier
„ Primary Switch
S
D
D
Pin 1
G
D
D
SuperSOT^TM -6
S4
D5
D6
3G
2D
1D
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
150
±20
2.3
10
12
1.6
0.8
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
30
(Note 1a)
78
°C/W
Device Marking
.244
Device
FDC86244
Package
SSOT-6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
1
FDC86244 Rev.C
www.fairchildsemi.com