FDC8602 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET 100 V, 1.2 A, 350 mΩ

July 2011
FDC8602
Dual N-Channel PowerTrench^® MOSFET
100 V, 1.2 A, 350 mΩ
Features
General Description
„ Max r_DS(on) = 350 mΩ at V_GS = 10 V, I_D = 1.2 A
„ Max r_DS(on) = 575 mΩ at V_GS = 6 V, I_D = 0.9 A
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Fast switching speed
„ 100% UIL Tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been optimized for r_DS(on), switching performance and
ruggedness.
Applications
„ RoHS Compliant
„ Load Switch
„ Synchronous Rectifier
D2
S1
D1
Pin 1
G2
S2
G1
SuperSOT^TM -6
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
1.2
5
1.5
0.96
0.69
-55 to +150
Units
V
V
A
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
60
(Note 1a)
130
°C/W
Device Marking
.862
Device
FDC8602
Package
SSOT-6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDC8602 Rev.C
www.fairchildsemi.com