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FDC8601 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Shielded Gate PowerTrench® MOSFET | |||
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FDC8601
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 2.7 A, 109 mΩ
May 2013
Features
General Description
 Shielded Gate MOSFET Technology
 Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A
 Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A
 High performance trench technology for extremely low rDS(on)
 High power and current handling capability in a widely used
surface mount package
 Fast switching speed
 100% UIL Tested
 RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductorâs advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Applications
 Load Switch
 Synchronous Rectifier
 Primary Switch
S
D
D
Pin 1
G
D
D
SuperSOTTM -6
S4
D5
D6
3G
2D
1D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
2.7
12
13
1.6
0.8
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
30
(Note 1a)
78
°C/W
Device Marking
.861
Device
FDC8601
Package
SSOT-6
Reel Size
7 ââ
Tape Width
8 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
1
FDC8601 Rev. C1
www.fairchildsemi.com
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