FDC855N Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrench® MOSFET 30V, 6.1A, 27mΩ

January 2008
FDC855N
tm
Single N-Channel, Logic Level, PowerTrench^® MOSFET
30V, 6.1A, 27mΩ
Features
„ Max r_DS(on) = 27mΩ at V_GS = 10V, I_D = 6.1A
„ Max r_DS(on) = 36mΩ at V_GS = 4.5V, I_D = 5.3A
„ SuperSOT^TM -6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick).
„ RoHS Compliant
General Description
This N-Channel Logic Level MOSFET is an efficient solution for
low voltage and battery powered applications. Utilizing Fairchild
Semiconductor’s advanced PowerTrench^® process, this device
possesses minimized on-state resistance to optimize the power
consumption. They are ideal for applications where in-line power
loss is critical.
Application
„ Power Management in Notebook, Hard Disk Drive
S
D
D
D
D
D
D
SuperSOT^TM-6
G
D
G
S
D
Pin 1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25°C
Power Dissipation (Steady State)
Power Dissipation (Steady State)
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±20
6.1
20
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
30
(Note 1a)
78
°C/W
Device Marking
.855
Device
FDC855N
Package
SuperSOT-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDC855N Rev.C
www.fairchildsemi.com