FDC697P Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel 1.8V PowerTrench MOSFET

January 2004
FDC697P
P-Channel 1.8V PowerTrench^ MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage Power Trench
process. It has been optimized for battery power
management applications.
Applications
• Battery management
• Load Switch
• Battery protection
Features
• –8 A, –20 V
R_DS(ON) = 20 mΩ @ V_GS = –4.5 V
R_DS(ON) = 25 mΩ @ V_GS = –2.5 V
R_DS(ON) = 35 mΩ @ V_GS = –1.8 V
• High performance trench technology for extremely
low R_DS(ON)
• Fast switching speed
• FLMP SuperSOT-6 package: Enhanced thermal
performance in industry-standard package size
G
S
S
S
S
S
SuperSOT-6^TM FLMP
1
6
2
5
3
4
Bottom
Drain
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.697
FDC697P
7’’
Ratings
–20
±8
–8
–40
2
1.5
–55 to +150
60
111
0.5
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2004 Fairchild Semiconductor Corporation
FDC697P Rev C2 (W)