FDC658P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Single P-Channel, Logic Level, PowerTrenchTM MOSFET

February 1999
FDC658P
Single P-Channel, Logic Level, PowerTrench^TM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-4 A, -30 V. R_DS(ON) = 0.050 Ω @ V_GS = -10 V
R_DS(ON) = 0.075 Ω @ V_GS = -4.5 V.
Low gate charge (8nC typical).
High performance trench technology for extremely low
R_DS(ON).
SuperSOT^TM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
S
D
D
.658
G
D
SuperSOT ^TM -6 ^{pin 1 D}
Absolute Maximum Ratings
Symbol Parameter
V_DSS
Drain-Source Voltage
T_A = 25°C unless otherwise note
V_GSS
Gate-Source Voltage - Continuous
I_D
Drain Current - Continuous
- Pulsed
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
1
2
3
Ratings
-30
±20
-4
-20
1.6
0.8
-55 to 150
78
30
SOIC-16
6
5
4
Units
V
V
A
W
°C
°C/W
°C/W
© 1999 Fairchild Semiconductor Corporation
FDC658P Rev.C