FDC658AP Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Single P-Channel Logic Level PowerTrench® MOSFET -30V, -4A, 50mOhm

January 2006
FDC658AP
Single P-Channel Logic Level PowerTrench^® MOSFET
-30V, -4A, 50mΩ
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild's advanced PowerTrench process. It has been
optimized for battery power management applications.
Applications
„ Battery management
„ Load switch
„ Battery protection
„ DC/DC conversion
Features
„ Max r_DS(on) = 50 mΩ @ V_GS = -10 V, I_D = -4A
„ Max r_DS(on) = 75 mΩ @ V_GS = -4.5 V, I_D = -3.4A
„ Low Gate Charge
„ High performance trench technology for extremely low
r_DS(on)
„ RoHS Compliant
S
D
D
1
G
2
D
D
3
PIN 1
SuperSOT^TM-6
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
Thermal Characteristics
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
.58A
Device
FDC658AP
Reel Size
7inch
Tape Width
8mm
6
5
4
Ratings
-30
±25
-4
-20
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
78
°C/W
30
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDC658AP Rev. B (W)
www.fairchildsemi.com