FDC655BN Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrench MOSFET

April 2005
FDC655BN
Single N-Channel, Logic Level, PowerTrench^® MOSFET
Features
■ 6.3 A, 30 V.
R_DS(ON) = 25 mΩ @ V_GS = 10 V
R_DS(ON) = 33 mΩ @ V_GS = 4.5 V
■ Fast switching
■ Low gate charge
■ High performance trench technology for extremely low Rdson
General Description
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimized on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
S
D
D
55B
SuperSOT-6^TM
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
T_J, T_STG Operating and Storage Junction Temperature Range
Thermal Characteristics
R _{θ JA}
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Ratings
30
±20
6.3
20
1.6
0.8
– 55 to +150
78
30
Package Marking and Ordering Information
Device Marking
.55B
Device
FDC655BN
Reel Size
7’’
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
FDC655BN Rev. C(W)
www.fairchildsemi.com