FDC655AN Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrenchTM MOSFET

June 1998
FDC655AN
Single N-Channel, Logic Level, PowerTrench^TM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Features
6.3 A, 30 V. R_DS(ON) = 0.027 Ω @ V_GS = 10 V
R_DS(ON) = 0.035 Ω @ V_GS = 4.5 V.
Fast switching.
Low gate charge ( typical 9 nC).
SuperSOT^TM-6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick); pin compatible with
TSOP-6.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
S
D
D
.55A
G
D
SuperSOT ^TM -6 ^{pin 1 D}
Absolute Maximum Ratings T_A = 25°C unless otherwise note
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage - Continuous
I_D
Drain Current - Continuous
- Pulsed
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
© 1998 Fairchild Semiconductor Corporation
1
6
2
5
3
4
FDC655AN
30
±20
6.3
20
1.6
0.8
-55 to 150
78
30
Units
V
V
A
W
°C
°C/W
°C/W
FDC655AN Rev.C