FDC645N_01 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

April 2001
FDC645N
N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 5.5 A, 30 V.
RDS(ON) = 30 mΩ @ VGS = 4.5 V
RDS(ON) = 26 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (13 nC typical)
• High power and current handling capability
S
D
D
SuperSOT ^TM-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.645
FDC645N
7’’
Ratings
30
±12
5.5
20
1.6
0.8
-55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDC645N Rev C(W)