FDC6432SH Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET

April 2003
FDC6432SH
12V P-Channel PowerTrench^ MOSFET, 30V PowerTrench^ SyncFET
General Description
Features
This complementary P-Channel MOSFET with
SyncFET has been designed specifically to improve the
overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM
controllers. It has been optimized for providing an
extremely low R_DS(ON) in a small package.
Applications
DC/DC converter
Power management
• SyncFET
2.4 A, 30V
R_DS(ON) = 90 mΩ @ V_GS = 10 V
R_DS(ON) = 105 mΩ @ V_GS = 4.5 V
• P channel
–2.5 A, –12V
R
R_DS(ON) = 90 mΩ @ V_GS = –4.5 V
R_DS(ON) = 125 mΩ @ V_GS = –2.5 V
R_DS(ON) = 220 mΩ @ V_GS = –1.8 V
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON)
D2
S1
D1
SuperSOT ^TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
D1,2 ₄
S1
5
D1,2 ⁶
Q2(P)
3 ^G2
2 ^S2
1 _G1
Q1(N)
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
T_J, T_STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current– Continuous
(Note 1a)
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.432
FDC6432SH
7’’
Ratings
Q1 (N)
30
Q2 (P)
–12
±16
±8
2.4
–2.5
7
–7
1.3
0.7
–55 to +150
Units
V
V
A
W
°C
100
°C/W
175
60
Tape width
8mm
Quantity
3000 units
2003 Fairchild Semiconductor Corp.
FDC6432SH Rev B (W)