FDC642P_F085 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor –
FDC642P P-Channel 2.5V specified PowerTrench MOSFET

July 1999
FDC642P
P-Channel 2.5V Specified PowerTrench^TM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the larger packages are impractical.
Applications
• Load switch
• Battery protection
• Power management
Features
• -4 A, -20 V. R_DS(ON) = 0.065 Ω @ V_GS = -4.5 V
R_DS(ON) = 0.100 Ω @ V_GS = -2.5 V
• Fast switching speed.
• Low gate charge (7.2nC typical).
• High performance trench technology for extremely
low R_DS(ON).
• SuperSOT^TM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
S
D
D
SuperSOT ^TM-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Ratings
-20
±8
-4
-20
1.6
0.8
-55 to +150
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.642
FDC642P
7’’
78
30
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDC642P, Rev. B