FDC642P_09 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ

FDC642P_F085
P-Channel PowerTrench^® MOSFET
-20V, -4A, 100mΩ
Features
„ Typ r_DS(on) = 52.5mΩ at V_GS = -4.5V, I_D = -4A
„ Typ r_DS(on) = 75.3mΩ at V_GS = -2.5V, I_D = -3.2A
„ Fast switching speed
„ Low gate charge(6.9nC typical)
„ High performance trench technology for extremely low
r_DS(on)
„ SuperSOT^TM-6 package:small footprint(72% smaller
than standard SO-8);low profile(1mm thick).
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Load switch
„ Battery protection
„ Power management
June 2009
S
D
D
SuperSOT ^TM-6
G
D
D
S₄
D₅
D₆
3^G
2^D
1^D
©2009 Fairchild Semiconductor Corporation
1
FDC642P_F085 Rev. A
www.fairchildsemi.com