FDC6420C Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 20V N & P-Channel PowerTrench MOSFETs

September 2001
FDC6420C
20V N & P-Channel PowerTrench^® MOSFETs
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
• DC/DC converter
• Load switch
• LCD display inverter
D2
S1
D1
Features
• Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V
RDS(ON) = 95 mΩ @ VGS = 2.5 V
• Q2 –2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS = –4.5 V
RDS(ON) = 190 mΩ @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON).
• SuperSOT –6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick).
Q2(P)
4
3
SuperSOT ^TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.420
FDC6420C
7’’
5
2
6
1
Q1(N)
Q1
Q2
20
–20
±12
±12
3.0
–2.2
12
–6
0.96
0.9
0.7
–55 to +150
130
60
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
8mm
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDC6420C Rev C(W)