FDC640P_01 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V PowerTrench Specified MOSFET

January 2001
FDC640P
P-Channel 2.5V PowerTrench^ Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
• Battery management
• Load switch
• Battery protection
Features
• –4.5 A, –20 V
RDS(ON) = 0.053 Ω @ VGS = –4.5 V
RDS(ON) = 0.080 Ω @ VGS = –2.5 V
• Rugged gate rating (±12V)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
S
D
D
SuperSOT ^TM-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.640
FDC640P
7’’
Ratings
–20
±12
–4.5
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor International
FDC640P Rev E(W)