FDC640P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrenchTM MOSFET

August 2000
FDC640P
P-Channel 2.5V Specified PowerTrench^TM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages.
Applications
• Load switch
• Battery protection
• Power management
Features
• -4.5 A, -20 V. R_DS(ON) = 0.050 Ω @ V_GS = -4.5 V
R_DS(ON) = 0.077 Ω @ V_GS = -2.5 V
• Rugged gate rating (±12V).
• High performance trench technology for extremely
low R_DS(ON).
• SuperSOT^TM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
S
D
D
SuperSOT ^TM-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
T_J, T_stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
Drain Current - Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
-20
±¹²
-4.5
-20
1.6
0.8
-55 to +150
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
30
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.640
FDC640P
7’’
Tape Width
8mm
2000 Fairchild Semiconductor International
Units
V
V
A
W
°^C
°^C/W
°^C/W
Quantity
3000 units
FDC640P, Rev.C