FDC6401N Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET

October 2001
FDC6401N
Dual N-Channel 2.5V Specified PowerTrench^® MOSFET
General Description
This Dual N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
• Battery Protection
• Power Management
Features
• 3.0 A, 20 V.
RDS(ON) = 70 mΩ @ VGS = 4.5 V
RDS(ON) = 95 mΩ @ VGS = 2.5 V
• Low gate charge (3.3 nC)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D2
S1
D1
SuperSOT ^TM -6
G2
S2
G1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.401
FDC6401N
7’’
4
5
6
Ratings
20
±12
3.0
12
0.96
0.9
0.7
–55 to +150
130
60
Tape width
8mm
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDC6401N Rev C (W)