FDC638P_01 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V PowerTrench Specified MOSFET

September 2001
FDC638P
P-Channel 2.5V PowerTrench^® Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance
These devices are well suited for battery power
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
• –4.5 A, –20 V. RDS(ON) = 48 mΩ @ VGS = –4.5 V
RDS(ON) = 65 mΩ @ VGS = –2.5 V
• Low gate charge (10 nC typical)
• High performance trench technology for extremely
low RDS(ON)
• SuperSOT ™ –6 package: small footprint (72%
smaller than standard SO-8; low profile (1mm thick)
S
D
D
SuperSOT -6^TM
G
D
pin 1
D
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.638
FDC638P
7’’
1
6
2
5
3
4
Ratings
–20
±8
–4.5
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDC638P Rev F1 (W)