FDC638P Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrenchTM MOSFET

June 1999
FDC638P
P-Channel 2.5V Specified PowerTrench^TM MOSFET
General Description
This P -Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
These devices are well suited for battery power applications: load
switching and power management, battery charging circuits, and
DC/DC conversion.
Features
-4.5 A, -20 V. R_DS(ON) = 0.045 Ω @ V_GS = -4.5 V
R_DS(ON) = 0.065 Ω @ V_GS = -2.5 V.
Low gate charge (13nC typical).
High performance trench technology for extremely low R_DS(ON).
SuperSOT^TM-6 package: small footprint (72% smaller than standard
SO-8); low profile (1mm thick).
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
S
D
D
.638
G
D
SuperSOT ^TM -6 ^{pin 1 D}
1
6
2
5
3
4
Absolute Maximum Ratings T_A = 25°C unless otherwise note
Symbol Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
T_J,T_STG ^{Operating and Storage Temperature Range}
THERMAL CHARACTERISTICS
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
Ratings
-20
±8
-4.5
-20
1.6
0.8
-55 to 150
78
30
Units
V
V
A
W
°C
°C/W
°C/W
©1999 Fairchild Semiconductor
FDC638P Rev.D