FDC638APZ Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm

December 2006
FDC638APZ
P-Channel 2.5V PowerTrench^® Specified MOSFET
–20V, –4.5A, 43mΩ
Features
General Description
„ Max r_DS(on) = 43mΩ at V_GS = –4.5V, I_D = –4.5A
„ Max r_DS(on) = 68mΩ at V_GS = –2.5V, I_D = –3.8A
„ Low gate charge (8nC typical).
„ High performance trench technology for extremely low r_DS(on).
„ SuperSOT^TM –6 package:small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
„ RoHS Compliant
This P-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench^® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance
These devices are well suited for battery power applications:load
switching and power management,battery charging circuits,and
DC/DC conversion.
Application
„ DC - DC Conversion
S
D
D
Pin 1
G
D
D
SuperSOT^TM -6
D₁
D₂
G ₃₃
6^D
5^D
4^S
MOSFET Maximum Ratings T_A= 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
Device Marking
.638Z
Device
FDC638APZ
Reel Size
7’’
Ratings
–20
±12
–4.5
–20
1.6
0.8
–55 to +150
Units
V
V
A
W
°C
78
°C/W
156
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDC638APZ Rev.B
www.fairchildsemi.com