FDC637BNZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 6.2A, 24mΩ

September 2007
FDC637BNZ
tm
N-Channel 2.5V Specified PowerTrench^® MOSFET
20V, 6.2A, 24mΩ
Features
General Description
„ Max r_DS(on) = 24mΩ at V_GS = 4.5V, I_D = 6.2A
„ Max r_DS(on) = 32mΩ at V_GS = 2.5V, I_D = 5.2A
„ Fast switching speed
„ Low gate charge (8nC typical)
„ High performance trench technology for extremely low r_DS(on)
„ SuperSOT™–6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick)
„ HBM ESD protection level > 2kV typical (Note 3)
„ Manufactured using green packaging material
„ Halide-Free
„ RoHS Compliant
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench^® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint compared with bigger SO-8
and TSSOP-8 packages.
Applications
„ DC - DC Conversion
„ Load switch
„ Battery Protection
S
D
D
D1
6D
Pin 1
G
D
D
D2
G3
5D
4S
SuperSOT^TM -6
MOSFET Maximum Ratings T_A= 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25°C
Power Dissipation
T_A = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±12
6.2
20
1.6
0.8
–55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
78
(Note 1b)
156
°C/W
Device Marking
.637Z
Device
FDC637BNZ
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
1
FDC637BNZ Rev.C
www.fairchildsemi.com