FDC637AN Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET

November 1999
FDC637AN
Single N-Channel, 2.5V Specified PowerTrench^TM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.
Applications
• DC/DC converter
• Load switch
• Battery Protection
Features
• 6.2 A, 20 V. R_DS(on) = 0.024 Ω @ V_GS = 4.5 V
R_DS(on) = 0.032 Ω @ V_GS = 2.5 V
• Fast switching speed.
• Low gate charge (10.5nC typical).
• High performance trench technology for extremely
low R_DS(ON).
• SuperSOT^TM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
S
D
D
SuperSOT ^TM-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
Rθ_JA
Thermal Resistance, Junction-to-Ambient
Rθ_JC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.637
FDC637AN
7’’
FDC637AN
20
±8
6.2
20
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
78
°C/W
30
°C/W
Tape Width
8mm
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDC637AN, Rev. C