FDC634P_01 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET

September 2001
FDC634P
P-Channel 2.5V Specified PowerTrench^® MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –3.5 A, –20 V. RDS(ON) = 80 mΩ @ VGS = –4.5 V
RDS(ON) = 110 mΩ @ VGS = –2.5 V
• Low gate charge (7.2 nC typical)
• High performance trench technology for extremely
low RDS(ON)
S
D
D
SuperSOT ^TM-6
G
D
D
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.634
FDC634P
7’’
1
6
2
5
3
4
Ratings
–20
±8
–3.5
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDC634P Rev E (W)