FDC6333C Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 30V N & P-Channel PowerTrench MOSFETs

October 2001
FDC6333C
30V N & P-Channel PowerTrench^® MOSFETs
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
• DC/DC converter
• Load switch
• LCD display inverter
D2
S1
D1
Features
• Q1 2.5 A, 30V.
RDS(ON) = 95 mΩ @ VGS = 10 V
RDS(ON) = 150 mΩ @ VGS = 4.5 V
• Q2 –2.0 A, 30V.
RDS(ON) = 150 mΩ @ VGS = –10 V
RDS(ON) = 220 mΩ @ VGS = –4.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON).
• SuperSOT –6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick).
Q2(P)
4
3
SuperSOT ^TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
5
2
6
1
Q1(N)
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.333
FDC6333C
7’’
Q1
Q2
30
–30
±16
±25
2.5
–2.0
8
–8
0.96
0.9
0.7
–55 to +150
Units
V
V
A
W
°C
130
°C/W
60
°C/W
Tape width
8mm
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDC6333C Rev C (W)