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FDC6331L_07 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Integrated Load Switch
FDC6331L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOTTM-6
package.
Applications
x Load switch
x Power management
August 2001
April 2007
tm
Features
x –2.8 A, –8 V. RDS(ON) = 55 m: @ VGS = –4.5 V
RDS(ON) = 70 m: @ VGS = –2.5 V
RDS(ON) = 100 m:@ VGS = –1.8 V
x Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
x High performance trench technology for extremely
low RDS(ON)
D2
S1
D1
SuperSOTTM -6
Pin 1
G2
S2
G1
SuperSOT™-6
Vin,R1 4
ON/OFF 5
R1,C1 6
Q2
3 Vout,C1
2 Vout,C1
Q1
1 R2
See Application Circuit
Equivalent Circuit
IN
+ V DROP –
OUT
ON/OFF
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
V IN
V ON/OFF
ILoad
Parameter
Maximum Input Voltage
High level ON/OFF voltage range
Load Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Maximum Power Dissipation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RTJA
Thermal Resistance, Junction-to-Ambient
RTJ C
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.331
FDC6331L
7’’
Ratings
r8
–0.5 to 8
2.8
9
0.7
–55 to +150
180
60
Tape width
8mm
Units
V
V
A
W
qC
qC/W
qC/W
Quantity
3000 units
”2007 Fairchild Semiconductor Corporation
FDC6331L Rev D