FDC6330L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated Load Switch

February 1999
FDC6330L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where 3V
to 20V input and 2.3A output current capability are needed.
This load switch integrates a small N-Channel power
MOSFET (Q1) which drives a large P-Channel power
MOSFET (Q2) in one tiny SuperSOT^TM-6 package.
Applications
• Power management
• Load actuation
Features
• V = 0.2V @ V = 12V, I =2.5 A. R = 0.08 Ω
DROP
IN
L
(ON)
V = 0.2V @ V = 5V,I = 1.6 A. R = 0.125 Ω.
DROP
IN
L
(ON)
• Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6kV Human Body Model).
• High performance PowerTrench^TM technology for
extremely low on-resistance.
• SuperSOT^TM-6 package design using copper lead frame
for superior thermal and electrical capabilities.
SuperSOT ^TM-6
Vin,R1 4
ON/OFF 5
R1,C1 6
Q2
Q1
3 Vout,C1
2 Vout,C1
1 R2
EQUIVALENT CIRCUIT
VDR OP
IN
+
-
ON/ OFF
OUT
See Application Circuit
Absolute Maxim um Ratings ^TA^{=25oC unless otherwise noted}
Symbol
VIN
VON/OFF
ID
PD
TJ, Tstg
ESD
Parameter
Input Voltage Range
(Note 1)
On/Off Voltage Range
Load Current - Continuous
(Note 2)
- Pulsed
Maximum Power Dissipation
(Note 1)
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human-Body-Model (100pf/1500 Ohm)
Ratings
3 - 20
1.5 - 8
2.3
10
0.7
-55 to +150
6
Units
V
V
A
W
°C
kV
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 2)
(Note 2)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.330 ( . Denotes pin 1)
FDC6330L
7’’
180
60
Tape width
8mm
°^C/W
°C/W
Quantity
3000 units
©1999 Fairchild Semiconductor Corporation
FDC6330L Rev. C