FDC6329L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated Load Switch

FDC6329L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.5A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) which drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOT^TM-6
package.
November 1998
Features
V_DROP=0.2V @ V_IN=5V, I_L=2.8A. R_(ON) = 0.07Ω V_DROP=0.2V
@ V_IN=2.5V, I_L=1.9A. R_(ON) = 0.105Ω.
Control MOSFET (Q1) includes Zener protection for ESD
ruggedness (>6KV Human Body Model).
High performance trench technology for extremely low
on-resistance.
SuperSOT^TM-6 package design using copper lead frame for
superior thermal and electrical capabilities.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
.329
pin 1
SuperSOT ^TM-6
4 V IN , R1
5 ^VON/OFF
6 R1 , C1
Q2
Q1
3 VOUT , C1
IN
2 VOUT , C1
1 R2
EQUIVALENT CIRCUIT
+V^DROP -
O N / O FF
See Application Circuit
OUT
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
V_IN
V_ON/OFF
I_L
Input Voltage Range
On/Off Voltage Range
Load Current
(Note 1)
- Continuous (Note 2)
- Pulsed
P_D
T_J,T_STG
ESD
Maximum Power Dissipation
(Note 2)
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 2)
R_θJC
Thermal Resistance, Junction-to-Case (Note 2)
FDC6329L
2.5 - 8
1.5 - 8
2.5
10
0.7
-55 to 150
6
180
60
Units
V
V
A
W
°C
kV
°C/W
°C/W
FDC6329L Rev.C