FDC6323L Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Integrated Load Switch

March 1999
FDC6323L
Integrated Load Switch
General Description
These Integrated Load Switches are produced using
Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance and
provide superior switching performance. These
devices are particularly suited for low voltage high
side load switch application where low conduction loss
and ease of driving are needed.
Features
V_DROP=0.2V @ V_IN=5V, I_L=1A, V_ON/OFF= 1.5V to 8V
V_DROP=0.3V @ V_IN=3.3V, I_L=1A, V_ON/OFF= 1.5V to 8V.
High density cell design for extremely low on-resistance.
V_ON/OFF Zener protection for ESD ruggedness.
>6KV Human Body Model.
SuperSOT^TM-6 package design using copper lead frame
for superior thermal and electrical capabilities.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
pin 1
SuperSOT ^TM-6
Vin,R1 4
O N / O FF 5
R1,C1 6
Q2
Q1
3 Vout,C1
2 Vout,C1
IN
EQUIVALENT CIRCUIT
+V^DROP -
1 R2
O N / O FF
OUT
See Application Circuit
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
V_IN
V_ON/OFF
I_L
Input Voltage Range
On/Off Voltage Range
Load Current @ V_DROP=0.5V - Continuous (Note 1)
- Pulsed
(Note 1 & 3)
P_D
T_J,T_STG
ESD
Maximum Power Dissipation
(Note 2a)
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 2a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 2)
© 1999 Fairchild Semiconductor Corporation
FDC6323L
3-8
1.5 - 8
1.5
2.5
0.7
-55 to 150
6
180
60
Units
V
V
A
W
°C
kV
°C/W
°C/W
FDC6323L Rev.F