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FDC6318P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual P-Channel 1.8V PowerTrench Specified MOSFET | |||
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December 2001
FDC6318P
Dual P-Channel 1.8V PowerTrenchï Specified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
Applications
⢠Power management
⢠Load switch
Features
⢠â2.5 A, â12 V. RDS(ON) = 90 m⦠@ VGS = â4.5 V
RDS(ON) = 125 m⦠@ VGS = â2.5 V
RDS(ON) = 200 m⦠@ VGS = â1.8 V
⢠High performance trench technology for extremely
low RDS(ON)
⢠SuperSOTTM-6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D2
S1
D1
SuperSOT TM -6
G2
S2
G1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.318
FDC6318P
13ââ
4
5
6
Ratings
â12
±8
â2.5
â7
0.96
0.9
0.7
â55 to +150
130
60
Tape width
12mm
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
ï2001 Fairchild Semiconductor Corporation
FDC6318P Rev D (W)
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