|
FDC6310P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench MOSFET | |||
|
April 2001
FDC6310P
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
⢠Load switch
⢠Battery protection
⢠Power management
Features
⢠â2.2 A, â20 V. RDS(ON) = 125 m⦠@ VGS = â4.5 V
RDS(ON) = 190 m⦠@ VGS = â2.5 V
⢠Low gate charge
⢠Fast switching speed
⢠High performance trench technology for extremely
low RDS(ON)
⢠SuperSOT TM -6 package: small footprint 72%
smaller than standard SO-8); low profile (1mm thick)
D2
S1
D1
SuperSOT TM-6
G2
S2
G1
4
3
5
2
6
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.310
FDC6310P
7ââ
©2001 Fairchild Semiconductor Corporation
Ratings
â20
±12
â2.2
â6
0.96
0.9
0.7
â55 to +150
130
60
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
FDC6310P Rev C(W)
|
▷ |