FDC6305N Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET

March 1999
FDC6305N
Dual N-Channel 2.5V Specified PowerTrench^TM MOSFET
General Description
These N-Channel low threshold 2.5V specified
MOSFETs are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and
yet maintain low gate charge for superior switching
performance.
Applications
• Load switch
• DC/DC converter
• Motor driving
Features
• 2.7 A, 20 V. R_DS(ON) = 0.08 Ω @ V_GS = 4.5 V
R_DS(ON) = 0.12 Ω @ V_GS = 2.5 V
• Low gate charge (3.5nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• SuperSOT^TM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D2
S1
D1
SuperSOT ^TM-6
G2
S2
G1
4
3
5
2
6
1
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.305
FDC6305N
7’’
Ratings
20
±⁸
2.7
8
0.96
0.9
0.7
-55 to +150
130
60
Tape Width
8mm
©1999 Fairchild Semiconductor Corporation
Units
V
V
A
W
°^C
°^C/W
°^C/W
Quantity
3000 units
FDC6305N, Rev. C